2SJ162-E

Renesas

Produkt-Nr.:

2SJ162-E

Hersteller:

Paket:

TO-3P

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Datenblatt:

Beschreibung:

2SJ162 - P Channel MOSFET

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	TO-3P
Vgs(th) (Max) @ Id	1.45V @ 100mA
Drain to Source Voltage (Vdss)	160 V
Series	-
Power Dissipation (Max)	100W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk