2SJ380(F)

Toshiba Semiconductor and Storage

Produkt-Nr.:

2SJ380(F)

Hersteller:

Paket:

TO-220NIS

Charge:

Datenblatt:

Beschreibung:

MOSFET P-CH 100V 12A TO220NIS

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	210mOhm @ 6A, 10V
Supplier Device Package	TO-220NIS
Vgs(th) (Max) @ Id	2V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	35W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tube
Base Product Number	2SJ380