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2SJ661-DL-1E

onsemi

Produkt-Nr.:

2SJ661-DL-1E

Hersteller:

onsemi

Paket:

TO-263-2

Charge:

-

Datenblatt:

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Beschreibung:

MOSFET P-CH 60V 38A TO263-2

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 4360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 39mOhm @ 19A, 10V
Supplier Device Package TO-263-2
Vgs(th) (Max) @ Id -
Drain to Source Voltage (Vdss) 60 V
Series -
Power Dissipation (Max) 1.65W (Ta), 65W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr onsemi
Current - Continuous Drain (Id) @ 25°C 38A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Package Tape & Reel (TR)
Base Product Number 2SJ661