2SK2372(2)-A

Renesas Electronics America Inc

Produkt-Nr.:

2SK2372(2)-A

Hersteller:

Paket:

TO-3P

Charge:

Datenblatt:

Beschreibung:

DISCRETE / POWER MOSFET

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	270mOhm @ 13A, 10V
Supplier Device Package	TO-3P
Vgs(th) (Max) @ Id	3.5V @ 1mA
Drain to Source Voltage (Vdss)	500 V
Series	-
Power Dissipation (Max)	3W (Ta), 160W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk