2SK2507(F)

Toshiba Semiconductor and Storage

Produkt-Nr.:

2SK2507(F)

Hersteller:

Paket:

TO-220NIS

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 50V 25A TO220NIS

Menge:

Lieferung:

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	46mOhm @ 12A, 10V
Supplier Device Package	TO-220NIS
Vgs(th) (Max) @ Id	2V @ 1mA
Drain to Source Voltage (Vdss)	50 V
Series	-
Power Dissipation (Max)	30W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Bulk
Base Product Number	2SK2507