2SK2847(F)

Toshiba Semiconductor and Storage

Produkt-Nr.:

2SK2847(F)

Hersteller:

Paket:

TO-3P(N)IS

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 900V 8A TO3PIS

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	1.4Ohm @ 4A, 10V
Supplier Device Package	TO-3P(N)IS
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	900 V
Series	-
Power Dissipation (Max)	85W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	2SK2847