2SK3818-DL-E

onsemi

Produkt-Nr.:

2SK3818-DL-E

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Paket:

SMP

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Beschreibung:

2SK3818 - N-CHANNEL SILICON MOSF

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	13mOhm @ 37A, 10V
Supplier Device Package	SMP
Vgs(th) (Max) @ Id	2.6V @ 1mA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	1.65W (Ta), 75W (Tc)
Package / Case	TO-220-3, Short Tab
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	74A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Bulk