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APT11F80B

Microchip Technology

Produkt-Nr.:

APT11F80B

Paket:

TO-247 [B]

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 800V 12A TO247

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2471 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 900mOhm @ 6A, 10V
Supplier Device Package TO-247 [B]
Vgs(th) (Max) @ Id 5V @ 1mA
Drain to Source Voltage (Vdss) 800 V
Series POWER MOS 8™
Power Dissipation (Max) 337W (Tc)
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number APT11F80