APT25SM120B

Microsemi Corporation

Produkt-Nr.:

APT25SM120B

Hersteller:

Paket:

TO-247

Charge:

Datenblatt:

Beschreibung:

SICFET N-CH 1200V 25A TO247

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 20 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	175mOhm @ 10A, 20V
Supplier Device Package	TO-247
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	175W (Tc)
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Bulk