APT40SM120B

Microsemi Corporation

Produkt-Nr.:

APT40SM120B

Hersteller:

Paket:

TO-247

Charge:

Datenblatt:

Beschreibung:

SICFET N-CH 1200V 41A TO247

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2560 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 20 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Supplier Device Package	TO-247
Vgs(th) (Max) @ Id	3V @ 1mA (Typ)
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	273W (Tc)
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Bulk