APT50M80B2VRG

Microsemi Corporation

Produkt-Nr.:

APT50M80B2VRG

Hersteller:

Paket:

T-MAX™ [B2]

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 500V 58A T-MAX

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Operating Temperature	-
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8797 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	423 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	80mOhm @ 29A, 10V
Supplier Device Package	T-MAX™ [B2]
Vgs(th) (Max) @ Id	4V @ 2.5mA
Drain to Source Voltage (Vdss)	500 V
Series	POWER MOS V®
Power Dissipation (Max)	-
Package / Case	TO-247-3 Variant
Technology	MOSFET (Metal Oxide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube