APT94N65B2C6

Microchip Technology

Produkt-Nr.:

APT94N65B2C6

Hersteller:

Paket:

T-MAX™ [B2]

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 650V 95A T-MAX

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	320 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	35mOhm @ 35.2A, 10V
Supplier Device Package	T-MAX™ [B2]
Vgs(th) (Max) @ Id	3.5V @ 3.5mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	833W (Tc)
Package / Case	TO-247-3 Variant
Technology	MOSFET (Metal Oxide)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	95A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	APT94N65