APT9F100S

Microsemi Corporation

Produkt-Nr.:

APT9F100S

Hersteller:

Paket:

D3Pak

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 1000V 9A D3PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2606 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	1.6Ohm @ 5A, 10V
Supplier Device Package	D3Pak
Vgs(th) (Max) @ Id	5V @ 1mA
Drain to Source Voltage (Vdss)	1000 V
Series	POWER MOS 8™
Power Dissipation (Max)	337W (Tc)
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube