APTC90DAM60T1G

Microsemi Corporation

Produkt-Nr.:

APTC90DAM60T1G

Hersteller:

Paket:

SP1

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 900V 59A SP1

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	540 nC @ 10 V
Mounting Type	Chassis Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	60mOhm @ 52A, 10V
Supplier Device Package	SP1
Vgs(th) (Max) @ Id	3.5V @ 6mA
Drain to Source Voltage (Vdss)	900 V
Series	CoolMOS™
Power Dissipation (Max)	462W (Tc)
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tray