APTM100DA18T1G

Microsemi Corporation

Produkt-Nr.:

APTM100DA18T1G

Hersteller:

Paket:

SP1

Charge:

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Beschreibung:

MOSFET N-CH 1000V 40A SP1

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	570 nC @ 10 V
Mounting Type	Chassis Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	216mOhm @ 33A, 10V
Supplier Device Package	SP1
Vgs(th) (Max) @ Id	5V @ 2.5mA
Drain to Source Voltage (Vdss)	1000 V
Series	-
Power Dissipation (Max)	657W (Tc)
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk