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APTMC120AM55CT1AG

Microchip Technology

Produkt-Nr.:

APTMC120AM55CT1AG

Paket:

SP1

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET 2N-CH 1200V 55A SP1

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 20V
Mounting Type Chassis Mount
Product Status Active
Rds On (Max) @ Id, Vgs 49mOhm @ 40A, 20V
Supplier Device Package SP1
Vgs(th) (Max) @ Id 2.2V @ 2mA (Typ)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case SP1
Technology Silicon Carbide (SiC)
Power - Max 250W
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Package Bulk
Base Product Number APTMC120