BAS101,215

NXP Semiconductors

Produkt-Nr.:

BAS101,215

Hersteller:

Paket:

TO-236AB

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Datenblatt:

Beschreibung:

DIODE GP 300V 200MA TO236AB

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Speed	Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)	50 ns
Capacitance @ Vr, F	2pF @ 0V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	TO-236AB
Current - Reverse Leakage @ Vr	150 nA @ 250 V
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 100 mA
Mfr	NXP Semiconductors
Voltage - DC Reverse (Vr) (Max)	300 V
Package	Bulk
Operating Temperature - Junction	150°C (Max)
Current - Average Rectified (Io)	200mA