BAS116GWJ

NXP Semiconductors

Produkt-Nr.:

BAS116GWJ

Hersteller:

Paket:

SOD-123

Charge:

Datenblatt:

Beschreibung:

DIODE GEN PURP 75V 215MA SOD123

Menge:

Lieferung:

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Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	3 µs
Capacitance @ Vr, F	2pF @ 0V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	SOD-123
Current - Reverse Leakage @ Vr	5 nA @ 75 V
Series	Automotive, AEC-Q101
Package / Case	SOD-123
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA
Mfr	NXP Semiconductors
Voltage - DC Reverse (Vr) (Max)	75 V
Package	Bulk
Operating Temperature - Junction	150°C (Max)
Current - Average Rectified (Io)	215mA