BSC004NE2LS5ATMA1

Infineon Technologies

Produkt-Nr.:

BSC004NE2LS5ATMA1

Hersteller:

Paket:

PG-TDSON-8

Charge:

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Beschreibung:

TRENCH <= 40V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs	238 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	0.45mOhm @ 30A, 10V
Supplier Device Package	PG-TDSON-8
Vgs(th) (Max) @ Id	2V @ 10mA
Drain to Source Voltage (Vdss)	25 V
Series	OptiMOS™
Power Dissipation (Max)	2.5W (Ta), 188W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	40A (Ta), 479A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)