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BSC097N06NSTATMA1

Infineon Technologies

Produkt-Nr.:

BSC097N06NSTATMA1

Paket:

PG-TDSON-8-1

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 60V 13A/48A TDSON

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : 4225

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.0735

    $1.0735

  • 10

    $0.8778

    $8.778

  • 100

    $0.68248

    $68.248

  • 500

    $0.578474

    $289.237

  • 1000

    $0.471228

    $471.228

  • 2000

    $0.443602

    $887.204

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1075 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Mounting Type Surface Mount
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 9.7mOhm @ 40A, 10V
Supplier Device Package PG-TDSON-8-1
Vgs(th) (Max) @ Id 3.3V @ 14µA
Drain to Source Voltage (Vdss) 60 V
Series OptiMOS™
Power Dissipation (Max) 3W (Ta), 43W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 48A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number BSC097