BSC882N03LSG

Infineon Technologies

Produkt-Nr.:

BSC882N03LSG

Hersteller:

Paket:

PG-TDSON-8-6

Charge:

Datenblatt:

Beschreibung:

N-CHANNEL POWER MOSFET

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 15 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	4.2mOhm @ 30A, 10V
Supplier Device Package	PG-TDSON-8-6
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	34 V
Series	OptiMOS™3 M
Power Dissipation (Max)	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	-
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk