BSD314SPE L6327

Infineon Technologies

Produkt-Nr.:

BSD314SPE L6327

Hersteller:

Paket:

PG-SOT363-6-6

Charge:

Datenblatt:

Beschreibung:

P-CHANNEL MOSFET

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	294 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	2.9 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	140mOhm @ 1.5A, 10V
Supplier Device Package	PG-SOT363-6-6
Vgs(th) (Max) @ Id	2V @ 6.3µA
Drain to Source Voltage (Vdss)	30 V
Series	OptiMOS™-P 3
Power Dissipation (Max)	500mW (Ta)
Package / Case	6-VSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk