BSM300C12P3E301

Rohm Semiconductor

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BSM300C12P3E301

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Paket:

Module

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Beschreibung:

SICFET N-CH 1200V 300A MODULE

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	Standard
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 10 V
Product Status	Active
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	Module
Vgs(th) (Max) @ Id	5.6V @ 80mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	1360W (Tc)
Package / Case	Module
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Vgs (Max)	+22V, -4V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Bulk
Base Product Number	BSM300