BSO615CGHUMA1

Infineon Technologies

Produkt-Nr.:

BSO615CGHUMA1

Hersteller:

Paket:

PG-DSO-8

Charge:

Datenblatt:

Beschreibung:

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	22.5nC @ 10V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	110mOhm @ 3.1A, 10V
Supplier Device Package	PG-DSO-8
Vgs(th) (Max) @ Id	2V @ 20µA
Drain to Source Voltage (Vdss)	60V
Series	SIPMOS®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	3.1A, 2A
Package	Tape & Reel (TR)
Base Product Number	BSO615