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BSS223PWL6327

Infineon Technologies

Produkt-Nr.:

BSS223PWL6327

Paket:

PG-SOT323-3-3

Charge:

-

Datenblatt:

-

Beschreibung:

SMALL SIGNAL P-CHANNEL MOSFET

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 56 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 0.62 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 1.2Ohm @ 390mA, 4.5V
Supplier Device Package PG-SOT323-3-3
Vgs(th) (Max) @ Id 1.2V @ 1.5µA
Drain to Source Voltage (Vdss) 20 V
Series OptiMOS®
Power Dissipation (Max) 250mW (Ta)
Package / Case SC-70, SOT-323
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 390mA (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Bulk