BTS115AE6327

Infineon Technologies

Produkt-Nr.:

BTS115AE6327

Hersteller:

Paket:

PG-TO220-3-1

Charge:

Datenblatt:

Beschreibung:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	735 pF @ 25 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	120mOhm @ 7.8A, 4.5V
Supplier Device Package	PG-TO220-3-1
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	50 V
Series	TEMPFET®
Power Dissipation (Max)	50W
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	15.5A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Package	Bulk