CPH6413-TLD-E

onsemi

Produkt-Nr.:

CPH6413-TLD-E

Hersteller:

Paket:

6-CPH

Charge:

Datenblatt:

Beschreibung:

N-CHANNEL SILICON MOSFET ULTRAHI

Menge:

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	7.6 nC @ 4 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	41mOhm @ 3A, 4V
Supplier Device Package	6-CPH
Vgs(th) (Max) @ Id	1.3V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1.6W (Ta)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Package	Bulk