CSD18536KTTT

Texas Instruments

Produkt-Nr.:

CSD18536KTTT

Hersteller:

Paket:

DDPAK/TO-263-3

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Datenblatt:

Beschreibung:

MOSFET N-CH 60V 200A/349A DDPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.6mOhm @ 100A, 10V
Supplier Device Package	DDPAK/TO-263-3
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	NexFET™
Power Dissipation (Max)	375W (Tc)
Package / Case	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Technology	MOSFET (Metal Oxide)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	200A (Ta), 349A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	CSD18536