CSD19501KCS

Texas Instruments

Produkt-Nr.:

CSD19501KCS

Hersteller:

Paket:

TO-220-3

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 80V 100A TO220-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	6.6mOhm @ 60A, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	3.2V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Series	NexFET™
Power Dissipation (Max)	217W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	CSD19501