CSD23201W10

Texas Instruments

Produkt-Nr.:

CSD23201W10

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Paket:

4-DSBGA (1x1)

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Beschreibung:

MOSFET P-CH 12V 2.2A 4DSBGA

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	325 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	2.4 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	82mOhm @ 500mA, 4.5V
Supplier Device Package	4-DSBGA (1x1)
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	12 V
Series	NexFET™
Power Dissipation (Max)	1W (Ta)
Package / Case	4-UFBGA, DSBGA
Technology	MOSFET (Metal Oxide)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Vgs (Max)	-6V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	CSD232