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CSD87330Q3DT

Texas Instruments

Produkt-Nr.:

CSD87330Q3DT

Hersteller:

Texas Instruments

Paket:

8-LSON (3.3x3.3)

Charge:

-

Datenblatt:

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Beschreibung:

PROTOTYPE

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Standard
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 15V, 1632pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 4.5V, 11.5nC @ 4.5V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V
Supplier Device Package 8-LSON (3.3x3.3)
Vgs(th) (Max) @ Id 2.1V @ 250µA, 1.15V @ 250µA
Drain to Source Voltage (Vdss) 30V
Series NexFET™
Package / Case 8-PowerLDFN
Technology MOSFET (Metal Oxide)
Power - Max 6W (Ta)
Mfr Texas Instruments
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Package Bulk
Base Product Number CSD87330