Texas Instruments
Produkt-Nr.:
CSD88539NDT
Hersteller:
Paket:
8-SOIC
Charge:
-
Datenblatt:
-
Beschreibung:
MOSFET 2N-CH 60V 15A 8SOIC
Menge:
Lieferung:

Zahlung:
Minimum: 1 Vielfache: 1
Menge
Stückpreis
Ext-Preis
1
$0.912
$0.912
10
$0.81795
$8.1795
100
$0.637735
$63.7735
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 741pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5A, 10V |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Drain to Source Voltage (Vdss) | 60V |
| Series | NexFET™ |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W |
| Mfr | Texas Instruments |
| Current - Continuous Drain (Id) @ 25°C | 15A |
| Package | Tape & Reel (TR) |
| Base Product Number | CSD88539 |