DMN1019USNQ-13

Diodes Incorporated

Produkt-Nr.:

DMN1019USNQ-13

Hersteller:

Paket:

SC-59-3

Charge:

Datenblatt:

Beschreibung:

MOSFET BVDSS: 8V~24V SC59 T&R 10

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2426 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	50.6 nC @ 8 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	10mOhm @ 9.7A, 4.5V
Supplier Device Package	SC-59-3
Vgs(th) (Max) @ Id	800mV @ 250µA
Drain to Source Voltage (Vdss)	12 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	680mW (Ta)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C	9.3A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	DMN1019