DMN21D2UFB-7

Diodes Incorporated

Produkt-Nr.:

DMN21D2UFB-7

Hersteller:

Paket:

X1-DFN1006-3

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Datenblatt:

Beschreibung:

MOSFET BVDSS: 8V~24V X1-DFN1006-

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	27.6 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs	0.93 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	990mOhm @ 100mA, 4.5V
Supplier Device Package	X1-DFN1006-3
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	380mW (Ta)
Package / Case	3-UFDFN
Technology	MOSFET (Metal Oxide)
Mfr	Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C	760mA (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	DMN21