DMT10H009LPS-13

Diodes Incorporated

Produkt-Nr.:

DMT10H009LPS-13

Hersteller:

Paket:

PowerDI5060-8

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 100V PWRDI5060

Menge:

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Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	40.2 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8mOhm @ 20A, 10V
Supplier Device Package	PowerDI5060-8
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	1.3W (Ta)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 90A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	DMT10