E1780TG65E

IXYS

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E1780TG65E

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Beschreibung:

DIODE GEN PURP 3.6KV 1780A -

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Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.22 µs
Capacitance @ Vr, F	-
Mounting Type	Chassis Mount
Product Status	Active
Supplier Device Package	-
Current - Reverse Leakage @ Vr	100 mA @ 3600 V
Series	SONIC-FRD™
Package / Case	TO-200AF
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	3.83 V @ 1780 A
Mfr	IXYS
Voltage - DC Reverse (Vr) (Max)	3600 V
Package	Box
Operating Temperature - Junction	-40°C ~ 140°C
Current - Average Rectified (Io)	1780A
Base Product Number	E1780TG65