FCPF190N60E-F152

Fairchild Semiconductor

Produkt-Nr.:

FCPF190N60E-F152

Hersteller:

Paket:

TO-220F

Charge:

Datenblatt:

Beschreibung:

FCPF190N60E - POWER MOSFET N-CHA

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3175 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	190mOhm @ 10A, 10V
Supplier Device Package	TO-220F
Vgs(th) (Max) @ Id	3.5V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	*
Power Dissipation (Max)	39W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	20.6A (Tj)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk