FDA50N50

onsemi

Produkt-Nr.:

FDA50N50

Hersteller:

Paket:

TO-3PN

Charge:

Datenblatt:

Beschreibung:

POWER FIELD-EFFECT TRANSISTOR, 4

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	137 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	105mOhm @ 24A, 10V
Supplier Device Package	TO-3PN
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	500 V
Series	UniFET™
Power Dissipation (Max)	625W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk