FDB8880-ON

onsemi

Produkt-Nr.:

FDB8880-ON

Hersteller:

Paket:

TO-263AB

Charge:

Datenblatt:

Beschreibung:

11A, 30V, 0.0145OHM, N-CHANNEL,

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	11.6mOhm @ 40A, 10V
Supplier Device Package	TO-263AB
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	PowerTrench®
Power Dissipation (Max)	55W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 54A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk