FDD1600N10ALZD

Fairchild Semiconductor

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FDD1600N10ALZD

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Paket:

TO-252-4

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Beschreibung:

MOSFET N-CH 100V 6.8A TO252-4L

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	3.61 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	160mOhm @ 3.4A, 10V
Supplier Device Package	TO-252-4
Vgs(th) (Max) @ Id	2.8V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	PowerTrench®
Power Dissipation (Max)	14.9W (Tc)
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	6.8A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Bulk