FDD3510H

onsemi

Produkt-Nr.:

FDD3510H

Hersteller:

Paket:

TO-252 (DPAK)

Charge:

Datenblatt:

Beschreibung:

MOSFET N/P-CH 80V 4.3/2.8A TO252

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel, Common Drain
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 40V
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	80mOhm @ 4.3A, 10V
Supplier Device Package	TO-252 (DPAK)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	80V
Series	PowerTrench®
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Technology	MOSFET (Metal Oxide)
Power - Max	1.3W
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	4.3A, 2.8A
Package	Tape & Reel (TR)
Base Product Number	FDD3510