FDD6670A

Fairchild Semiconductor

Produkt-Nr.:

FDD6670A

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Paket:

TO-252AA

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Datenblatt:

Beschreibung:

POWER FIELD-EFFECT TRANSISTOR, 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8mOhm @ 15A, 10V
Supplier Device Package	TO-252AA
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	PowerTrench®
Power Dissipation (Max)	3.2W (Ta), 63W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	15A (Ta), 66A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk