FDMD8540L

Fairchild Semiconductor

Produkt-Nr.:

FDMD8540L

Hersteller:

Paket:

8-Power 5x6

Charge:

Datenblatt:

Beschreibung:

POWER FIELD-EFFECT TRANSISTOR, N

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	7940pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	113nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.5mOhm @ 33A, 10V
Supplier Device Package	8-Power 5x6
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	40V
Series	PowerTrench®
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2.3W
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	33A, 156A
Package	Bulk
Base Product Number	FDMD8540