FDMS86163P

onsemi

Produkt-Nr.:

FDMS86163P

Hersteller:

Paket:

8-PQFN (5x6)

Charge:

Datenblatt:

Beschreibung:

MOSFET P-CH 100V 7.9A/50A 8PQFN

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	4085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	22mOhm @ 7.9A, 10V
Supplier Device Package	8-PQFN (5x6)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	PowerTrench®
Power Dissipation (Max)	2.5W (Ta), 104W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	7.9A (Ta), 50A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	FDMS86163