FDT4N50NZU

onsemi

Produkt-Nr.:

FDT4N50NZU

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Paket:

SOT-223 (TO-261)

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Datenblatt:

Beschreibung:

POWER MOSFET, N-CHANNEL, UNIFETI

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	476 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	9.1 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3Ohm @ 1A, 10V
Supplier Device Package	SOT-223 (TO-261)
Vgs(th) (Max) @ Id	5.5V @ 250µA
Drain to Source Voltage (Vdss)	500 V
Series	UltraFRFET™, Unifet™ II
Power Dissipation (Max)	2W (Tc)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)