FGL60N100BNTD

onsemi

Produkt-Nr.:

FGL60N100BNTD

Hersteller:

Paket:

HPM F2

Charge:

Datenblatt:

Beschreibung:

1000V, 60A, NPT TRENCH IGBT

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
Test Condition	600V, 60A, 51Ohm, 15V
Input Type	Standard
Reverse Recovery Time (trr)	1.2 µs
Switching Energy	-
Current - Collector (Ic) (Max)	60 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	1000 V
Td (on/off) @ 25°C	140ns/630ns
Supplier Device Package	HPM F2
Current - Collector Pulsed (Icm)	200 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 60A
Package / Case	TO-264-3, TO-264AA
Gate Charge	275 nC
Power - Max	180 W
Mfr	onsemi
Package	Bulk
IGBT Type	NPT and Trench