FQE10N20LCTU

onsemi

Produkt-Nr.:

FQE10N20LCTU

Hersteller:

Paket:

TO-126-3

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Datenblatt:

Beschreibung:

MOSFET N-CH 200V 4A TO126-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 5 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	360mOhm @ 2A, 10V
Supplier Device Package	TO-126-3
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	QFET®
Power Dissipation (Max)	12.8W (Tc)
Package / Case	TO-225AA, TO-126-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tube
Base Product Number	FQE1