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FQU7P06TU

Fairchild Semiconductor

Produkt-Nr.:

FQU7P06TU

Paket:

I-PAK

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET P-CH 60V 5.4A IPAK

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 451mOhm @ 2.7A, 10V
Supplier Device Package I-PAK
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series QFET®
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube