G09N06S2

Goford Semiconductor

Produkt-Nr.:

G09N06S2

Hersteller:

Paket:

8-SOP

Charge:

Datenblatt:

Beschreibung:

N+N 60V,9A,RD<18M@10V,VTH1.2V~2.

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Standard
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2180pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	18mOhm @ 9A, 10V
Supplier Device Package	8-SOP
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	60V
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2.6W (Tc)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Package	Tape & Reel (TR)