G3R40MT12K

GeneSiC Semiconductor

Produkt-Nr.:

G3R40MT12K

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Paket:

TO-247-4

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Beschreibung:

SIC MOSFET N-CH 71A TO247-4

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2929 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 15 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	48mOhm @ 35A, 15V
Supplier Device Package	TO-247-4
Vgs(th) (Max) @ Id	2.69V @ 10mA
Drain to Source Voltage (Vdss)	1200 V
Series	G3R™
Power Dissipation (Max)	333W (Tc)
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C	71A (Tc)
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Base Product Number	G3R40